advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 25v low on-resistance r ds(on) 9m fast switching characteristic i d 60a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 3.2 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice 200831071pre-1/4 AP70U02GH preliminary parameter rating drain-source voltage 25 gate-source voltage 20 continuous drain current, v gs @ 10v 60 continuous drain current, v gs @ 10v 41 pulsed drain current 1 220 total power dissipation 47 -55 to 175 operating junction temperature range -55 to 175 linear derating factor 0.31 thermal data . storage temperature range g d s to-252(h) g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 9 m v gs =4.5v, i d =30a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =40a - 39 - s i dss drain-source leakage current v ds =25v, v gs =0v - - 1 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =40a - 18.5 30 nc q gs gate-source charge v ds =20v - 3.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 12.1 - nc t d(on) turn-on delay time 2 v ds =15v - 8.3 - ns t r rise time i d =40a - 102 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 24 - ns t f fall time r d =0.375 -12- ns c iss input capacitance v gs =0v - 1360 2180 pf c oss output capacitance v ds =25v - 202 - pf c rss reverse transfer capacitance f=1.0mhz - 198 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =20a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=100a/s - 25 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 AP70U02GH this product has been qualified for consumer market. applications or uses as criterial component in life support
AP70U02GH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 20 40 60 80 100 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 30 60 90 120 150 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.6 1 1.4 1.8 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 200 t j , junction temperature ( o c ) normalized v gs(th) (v) 5 7 9 11 13 15 246810 vgs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 :
fig7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP70U02GH 0 3 6 9 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =12v v ds =15v v ds =20v i d =40a 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 70u02gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement
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